1999. 11. 30 1/1 semiconductor technical data bfs20/BF599 epitaxial planar npn transistor revision no : 2 high frequency application. vhf band amplifier application. maximum rating (ta=25 1 ) dim millimeters 1. emitter 2. base 3. collector sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ electrical characteristics (ta=25 1 ) characteristic symbol test condition min. typ. max. unit collector-base breakdown voltage v (br)cbo i c =10 a, i e =0 40 - - v collector-emitter breakdown voltage v (br)ceo i c =2ma, i b =0 25 - - v emitter-base breakdown voltage bfs20 v (br)ebo i e =10 a, i c =0 4 - - v BF599 5 collector cut-off current bfs20 i cbo v cb =20v, i e =0 - - 100 na v cb =20v, i e =0, ta=150 1 - - 10 a BF599 v cb =40v, i e =0 - - 100 na dc current gain h fe v ce =10v, i c =7ma 40 - - - base-emitter voltage bfs20 v be(on) v ce =10v, i c =7ma - 750 900 mv BF599 - 750 - transition frequency bfs20 f t v ce =10v, i c =7ma, f=100mhz 275 550 - mhz BF599 - 550 - collector output capacitance c ob v cb =10v, f=1mhz, i e =0 - 0.35 - pf characteristic symbol rating unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 25 v emitter-base voltage bfs20 v ebo 4 v BF599 5 collector current i c 25 ma emitter current i e -25 ma collector power dissipation p c 200 mw junction temperature t j 150 1 storage temperature range t stg -65 150 1 type mark bfs20 g1 BF599 g2 mark spec type name marking lot no. g1 type name lot no. g2
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